Datasheet > AP01L60T_08

AP01L60T_08

更新时间： 2022-05-18 17:24:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	98K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP01L60T_08 数据手册

AP01L60T

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

600V

12Ω

▼ Fast Switching Characteristics

▼ Simple Drive Requirement

160mA

Description

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

TO-92

The TO-92 package is widely used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

600

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±30

I_D@T_A=25℃

I_D@T_A=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

160

100

300

P_D@T_A=25℃

T_STG

Total Power Dissipation

0.83

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

℃

T_J

℃

Thermal Data

Symbol

Parameter

Value

150

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

℃/W

Data & specifications subject to change without notice

200810225

12 3 4

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