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AOW11N60 PDF预览

AOW11N60

更新时间: 2024-09-26 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 452K
描述
600V,11A N-Channel MOSFET

AOW11N60 数据手册

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AOW11N60  
600V,11A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
The AOW11N60 has been fabricated using an advanced  
high voltage MOSFET process that is designed to deliver  
high levels of performance and robustness in popular AC-  
DC applications.By providing low RDS(on), Ciss and Crss  
along with guaranteed avalanche capability this device  
can be adopted quickly into new and existing offline power  
supply designs.  
700V@150  
11A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 0.7  
100% UIS Tested  
100% Rg Tested  
TO-262  
Top View  
Bottom View  
D
G
G
S
D
D
S
G
S
AOW11N60  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOW11N60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
±30  
11  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
8.0  
A
Pulsed Drain Current C  
IDM  
39  
4.8  
345  
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
mJ  
Single plused avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
690  
5
272  
mJ  
V/ns  
W
W/ oC  
PD  
Power Dissipation B  
Derate above 25oC  
2.2  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TL  
300  
°C  
Parameter  
Symbol  
RθJA  
AOW11N60  
Units  
Maximum Junction-to-Ambient A,D  
65  
°C/W  
Maximum Case-to-sink A  
RθCS  
0.5  
0.46  
°C/W  
°C/W  
Maximum Junction-to-Case  
RθJC  
Rev 0: Jan 2012  
www.aosmd.com  
Page 1 of 5  

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