Datasheet > AOW10N65

AOW10N65

更新时间： 2024-09-26 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	347K
描述
650V,10A N-Channel MOSFET

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AOW10N65 数据手册

AOW10N65/AOWF10N65

650V,10A N-Channel MOSFET

General Description

Product Summary

V_DS

750V@150℃

10A

The AOW10N65/AOWF10N65 is fabricated using an

advanced high voltage MOSFET process that is designed

to deliver high levels of performance and robustness in

popular AC-DC applications.By providing low R_DS(on), C_iss

and C_rssalong with guaranteed avalanche capability this

device can be adopted quickly into new and existing offline

power supply designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 1Ω

100% UIS Tested

100% R_gTested

TO-262

TO-262F

Bottom View

Top View

Bottom View

AOW10N65

AOWF10N65

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOW10N65

AOWF10N65

Units

Drain-Source Voltage

V_DS

650

±30

Gate-Source Voltage

V_GS

T_C=25°C

10*

Continuous Drain

Current

I_D

T_C=100°C

6.2

6.2*

Pulsed Drain Current ^C

I_DM

3.4

173

347

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

250

P_D

Power Dissipation ^B

Derate above 25^oC

W/ ^oC

0.22

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

T_L

-55 to 150

300

°C

Parameter

Symbol

R_θJA

AOW10N65

AOWF10N65

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

4.5

* Drain current limited by maximum junction temperature.

Rev1: Nov 2011

www.aosmd.com

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