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AOW10N60 PDF预览

AOW10N60

更新时间: 2024-09-26 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 251K
描述
600V,10A N-Channel MOSFET

AOW10N60 数据手册

 浏览型号AOW10N60的Datasheet PDF文件第2页浏览型号AOW10N60的Datasheet PDF文件第3页浏览型号AOW10N60的Datasheet PDF文件第4页浏览型号AOW10N60的Datasheet PDF文件第5页浏览型号AOW10N60的Datasheet PDF文件第6页 
AOW10N60/AOWF10N60  
600V,10A N-Channel MOSFET  
General Description  
Product Summary  
VDS  
700V@150  
10A  
The AOW10N60 & AOWF10N60 have been fabricated  
using an advanced high voltage MOSFET process that is  
designed to deliver high levels of performance and  
robustness in popular AC-DC applications.  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power supply  
designs.  
ID (at VGS=10V)  
R
DS(ON) (at VGS=10V)  
< 0.75  
100% UIS Tested  
100% Rg Tested  
TO-262  
TO-262F  
Bottom View  
D
Top View  
Bottom View  
Top View  
G
G
S
G
S
D
D
S
D
G
S
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
AOW10N60  
AOWF10N60  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
600  
±30  
V
V
VGS  
TC=25°C  
10  
10*  
Continuous Drain  
Current  
ID  
TC=100°C  
7.2  
7.2*  
A
Pulsed Drain Current C  
IDM  
36  
4.4  
290  
580  
5
Avalanche Current C  
IAR  
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
mJ  
Single plused avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
mJ  
V/ns  
W
W/ oC  
250  
2
28  
PD  
Power Dissipation B  
Derate above 25oC  
0.22  
Junction and Storage Temperature Range  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TJ, TSTG  
TL  
-55 to 150  
300  
°C  
°C  
Parameter  
Symbol  
RθJA  
AOW10N60  
AOWF10N60  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,D  
65  
0.5  
0.5  
65  
--  
Maximum Case-to-sink A  
RθCS  
Maximum Junction-to-Case  
RθJC  
4.5  
* Drain current limited by maximum junction temperature.  
Rev2: June 2010  
www.aosmd.com  
Page 1 of 6  

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