Datasheet > AOU4S60

AOU4S60

更新时间： 2024-09-26 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	457K
描述
600V 4A a MOS Power Transistor

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AOU4S60 数据手册

AOD4S60/AOI4S60/AOU4S60

600V 4A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

700V

16A

The AOD4S60 & AOI4S60 & AOU4S60 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

R_DS(ON),max

Q_g,typ

0.9Ω

6nC

E_oss@ 400V

1.5µJ

100% UIS Tested

100% R_gTested

TO252

DPAK

TO251A

IPAK

TO251

Top View

Bottom View

Top View

Bottom View

AOD4S60

AOI4S60

AOU4S60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

1.6

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^H

T_C=25°C

E_AR

E_AS

W/ ^oC

56.8

P_D

Power Dissipation ^B

Derate above 25^oC

0.45

100

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^K

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

Typical

Maximum

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

0.5

2.2

°C/W

1.8

Rev3: Jan 2012

www.aosmd.com

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