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AOU452 PDF预览

AOU452

更新时间: 2024-09-26 03:19:07
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 72K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOU452 数据手册

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AOU452  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOU452 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load  
switching and general purpose applications. Standard  
Product AOU452 is Pb-free (meets ROHS & Sony  
259 specifications). AOU452L is a Green Product  
ordering option. AOU452 and AOU452L are  
electrically identical.  
VDS (V) =25V  
ID = 55 A (VGS = 10V)  
RDS(ON) < 9 m(VGS = 10V)  
RDS(ON) < 15 m(VGS = 4.5V)  
TO-251  
D
Top View  
Drain Connected  
to Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
25  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current G  
±20  
55  
V
A
TC=25°C  
TC=100°C  
ID  
40  
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
EAR  
100  
30  
A
135  
50  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
25  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
Symbol  
RθJA  
Typ  
Max  
Units  
Steady-State  
Steady-State  
39  
50  
3
°C/W  
°C/W  
RθJC  
2.5  
Alpha & Omega Semiconductor, Ltd.  

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