Datasheet > AOTF8T50PL

AOTF8T50PL

更新时间： 2024-09-27 01:19:11

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	441K
描述
RoHS and Halogen Free Compliant

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中文翻译

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数据手册

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AOTF8T50PL 数据手册

AOTF8T50P

500V,8A N-Channel MOSFET

General Description

Product Summary

• Trench Power AlphaMOS-II technology

• Low R_DS(ON)

• Low Ciss and Crss

• High Current Capability

• RoHS and Halogen Free Compliant

V_DS@ T_j,max

I_DM

600V

32A

R_DS(ON),max

Q_g,typ

< 0.81Ω

13nC

2.5µJ

E_oss@ 400V

Applications

100% UIS Tested

100% R_gTested

• General Lighting for LED and CCFL

• AC/DC Power supplies for Industrial, Consumer, and

Telecom

Top View

TO-220F

AOTF8T50P

Orderable Part Number

AOTF8T50P

Package Type

TO-220F Pb Free

Form

Tube

Minimum Order Quantity

1000

AOTF8T50PL

TO-220F Green

Tube

1000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOTF8T50P

AOTF8T50PL

Units

Drain-Source Voltage

Gate-Source Voltage

500

±30

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

5.4*

Pulsed Drain Current ^C

I_DM

I_AR

Avalanche Current ^CL=1mH

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^J

T_C=25°C

E_AR

E_AS

421

dv/dt

V/ns

W/°C

°C

P_D

Power Dissipation ^B

Derate above 25°C

0.3

0.2

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

300

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case

Symbol

R_θJA

AOTF8T50P

AOTF8T50PL

Units

°C/W

R_θJC

3.3

4.5

* Drain current limited by maximum junction temperature.

Rev.1.0: July 2014

www.aosmd.com

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