Datasheet > AOTF8N80

AOTF8N80

更新时间： 2024-09-26 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	354K
描述
800V, 7.4A N-Channel MOSFET

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AOTF8N80 数据手册

AOT8N80/AOTF8N80

800V, 7.4A N-Channel MOSFET

General Description

Product Summary

V_DS

900V@150℃

7.4A

The AOT8N80 & AOTF8N80 have been fabricated using

an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.By providing

low R_DS(on), C_issand C_rssalong with guaranteed avalanche

capability these parts can be adopted quickly into new and

existing offline power supply designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 1.63Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT8N80L & AOTF8N80L

Top View

TO-220

TO-220F

AOT8N80

AOTF8N80

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT8N80

AOTF8N80

Units

Drain-Source Voltage

V_DS

800

±30

Gate-Source Voltage

V_GS

T_C=25°C

7.4

4.6

7.4*

4.6*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

3.8

217

433

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

245

2.0

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

°C

Parameter

Symbol

R_θJA

AOT8N80

AOTF8N80

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

0.5

°C/W

Maximum Junction-to-Case

R_θJC

0.51

2.5

* Drain current limited by maximum junction temperature.

Rev0: Jun 2012

www.aosmd.com

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AOTF8N80 替代型号

型号	品牌	替代类型	描述	数据表
AOT8N80	AOS	类似代替	800V, 7.4A N-Channel MOSFET
AOK8N80	AOS	功能相似	800V,7.4A N-Channel MOSFET

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