Datasheet > AOTF12N60L

AOTF12N60L

更新时间： 2024-09-17 20:01:07

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	272K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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AOTF12N60L 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	2.32	配置：	Single
最大漏极电流 (Abs) (ID)：	12 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	150 °C	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	50 W
子类别：	FET General Purpose Power	表面贴装：	NO
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AOTF12N60L 数据手册

AOT12N60/AOTF12N60

600V,12A N-Channel MOSFET

General Description

Product Summary

V_DS

700V@150℃

12A

The AOT12N60 & AOTF12N60 have been fabricated

using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.

By providing low R_DS(on), C_issand C_rssalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.55Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT12N60L & AOTF12N60L

Top View

TO-220F

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT12N60

AOTF12N60

Units

Drain-Source Voltage

Gate-Source Voltage

600

±30

V_GS

T_C=25°C

12*

Continuous Drain

Current

I_D

T_C=100°C

9.7

9.7*

Pulsed Drain Current ^C

I_DM

I_AR

5.5

450

Avalanche Current ^C

Repetitive avalanche energy ^C

E_AR

E_AS

Single plused avalanche energy ^G

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

T_C=25°C

900

dv/dt

V/ns

278

2.2

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

W/ ^oC

°C

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_J, T_STG

-55 to 150

300

T_L

°C

Parameter

Symbol

R_θJA

AOT12N60

AOTF12N60

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

0.45

2.5

* Drain current limited by maximum junction temperature.

Rev.6.0: June 2013

www.aosmd.com

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