Datasheet > AOTF11N62

AOTF11N62

更新时间： 2024-11-07 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	550K
描述
620V,11A N-Channel MOSFET

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技术参数
数据手册

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AOTF11N62 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.81	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AOTF11N62 数据手册

AOTF11N62

620V,11A N-Channel MOSFET

General Description

Product Summary

V_DS

720V@150℃

11A

The AOTF11N62 has been fabricated using an advanced

high voltage MOSFET process that is designed to deliver

high levels of performance and robustness in popular AC-

DC applications.By providing low R_DS(on), C_issand C_rss

along with guaranteed avalanche capability this device

can be adopted quickly into new and existing offline power

supply designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.65Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOTF11N62L

Top View

TO-220F

AOTF11N62

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOTF11N62

AOTF11N62L

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

620

±30

V_GS

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy ^C

I_DM

4.8

345

690

I_AR

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

V/ns

W/ ^oC

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

0.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

°C

Parameter

Symbol

R_θJA

AOTF11N62

AOTF11N62L

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case

R_θJC

2.5

3.2

* Drain current limited by maximum junction temperature.

Rev 1: July 2012

www.aosmd.com

Page 1 of 6

12 3 4 5 6

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