Datasheet > AOTF11C60P

AOTF11C60P

更新时间： 2024-11-08 01:19:11

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	454K
描述
High Current Capability

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AOTF11C60P 数据手册

AOTF11C60P

600V,11A N-Channel MOSFET

General Description

Product Summary

• Trench Power AlphaMOS-II technology

• Low R_DS(ON)

• Low Ciss and Crss

V_DS@ T_j,max

I_DM

700V

44A

R_DS(ON),max

Q_g,typ

< 0.4Ω

31nC

5.4µJ

• High Current Capability

E_oss@ 400V

Applications

100% UIS Tested

100% R_gTested

• General Lighting for LED and CCFL

• AC/DC Power supplies for Industrial, Consumer, and

Telecom

TO-220F

AOTF11C60P

Orderable Part Number

AOTF11C60P

Package Type

TO-220F Pb Free

Form

Tube

Minimum Order Quantity

1000

AOTF11C60PL

TO-220F Green

Tube

1000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOTF11C60P

AOTF11C60PL

Units

Drain-Source Voltage

Gate-Source Voltage

600

±30

V_GS

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

I_AR

Avalanche Current ^CL=1mH

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

T_C=25°C

E_AR

E_AS

940

100

dv/dt

V/ns

W/°C

°C

P_D

Power Dissipation ^B

Derate above 25°C

0.4

0.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

300

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A,D

Maximum Junction-to-Case

Symbol

R_θJA

AOTF11C60P

AOTF11C60PL

Units

°C/W

R_θJC

2.5

3.4

* Drain current limited by maximum junction temperature.

Rev.1.0: November 2014

www.aosmd.com

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