Datasheet > AOT412

AOT412

更新时间： 2024-09-30 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	192K
描述
N-Channel SDMOSTM Power Transistor

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AOT412 数据手册

AOT412

N-Channel SDMOS^TMPower Transistor

General Description

Features

The AOT412 and AOT412L is fabricated with SDMOS^TM

trench technology that combines excellent R_DS(ON)with

low gate charge.The result is outstanding efficiency with

controlled switching behavior. This universal technology

is well suited for PWM, load switching and general

purpose applications.

_DS(V) =100V

(V_GS= 10V)

(V_GS= 7V)

I_D= 60A

_DS(ON)< 15.8mΩ

_DS(ON)< 19.4mΩ

- RoHS Compliant

- AOT412L is Halogen Free

100% UIS Tested!

100% R_gTested!

TO-220

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

±25

Gate-Source Voltage

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

140

8.2

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

6.6

I_AR

E_AR

110

150

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.6

P_DSM

Power Dissipation ^A

T_A=70°C

1.7

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

0.7

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

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