5秒后页面跳转
AOT12N60FD PDF预览

AOT12N60FD

更新时间: 2024-09-27 12:24:59
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 279K
描述
600V, 12A N-Channel MOSFET

AOT12N60FD 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.74
配置:Single最大漏极电流 (Abs) (ID):12 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):278 W子类别:FET General Purpose Powers
表面贴装:NOBase Number Matches:1

AOT12N60FD 数据手册

 浏览型号AOT12N60FD的Datasheet PDF文件第2页浏览型号AOT12N60FD的Datasheet PDF文件第3页浏览型号AOT12N60FD的Datasheet PDF文件第4页浏览型号AOT12N60FD的Datasheet PDF文件第5页浏览型号AOT12N60FD的Datasheet PDF文件第6页 
AOT12N60FD/AOTF12N60FD  
600V, 12A N-Channel MOSFET  
General Description  
Product Summary  
ꢀꢀꢀVDS  
700V@150  
12A  
TheꢀAOT12N60FD/AOTF12N60FDꢀhaveꢀbeenꢀfabricated  
usingꢀanꢀadvancedꢀhighꢀvoltageꢀMOSFETꢀprocessꢀthatꢀis  
designedꢀtoꢀdeliverꢀhighꢀlevelsꢀofꢀperformanceꢀand  
robustnessꢀinꢀpopularꢀACꢁDCꢀapplications.  
ByꢀprovidingꢀlowꢀRDS(on),ꢀCissꢀandꢀCrssꢀalongꢀwith  
guaranteedꢀavalancheꢀcapabilityꢀtheseꢀpartsꢀcanꢀbe  
adoptedꢀquicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply  
designs.  
ꢀꢀꢀIDꢀꢀ(atꢀVGS=10V)  
ꢀꢀꢀRDS(ON)ꢀ(atꢀVGS=10V)  
<ꢀ0.65  
100%ꢀUISꢀTested  
100%ꢀꢀRgꢀTested  
ꢀꢀꢀForꢀHalogenꢀFreeꢀaddꢀ"L"ꢀsuffixꢀtoꢀpartꢀnumber:ꢀ  
ꢀꢀꢀAOT12N60FDLꢀ&ꢀAOTF12N60FDL  
Top View  
D
TO-220F  
TO-220  
G
S
S
S
D
G
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
AOT12N60FD  
AOTF12N60FD  
Units  
DrainꢁSourceꢀVoltage  
VDS  
600  
±30  
V
GateꢁSourceꢀVoltage  
VGS  
V
A
TC=25°C  
12  
8
12*  
8*  
ContinuousꢀDrain  
Current  
ID  
TC=100°C  
PulsedꢀDrainꢀCurrentꢀC  
AvalancheꢀCurrentꢀC  
IDM  
48  
5
IAR  
A
RepetitiveꢀavalancheꢀenergyꢀC  
EAR  
EAS  
dv/dt  
375  
750  
5
mJ  
SingleꢀpulsedꢀavalancheꢀenergyꢀG  
Peakꢀdiodeꢀrecoveryꢀdv/dt  
TC=25°C  
mJ  
V/ns  
W
W/ꢀoC  
278  
2.2  
50  
PD  
PowerꢀDissipationꢀB  
Derateꢀaboveꢀ25oC  
0.4  
JunctionꢀandꢀStorageꢀTemperatureꢀRange  
Maximumꢀleadꢀtemperatureꢀforꢀsoldering  
purpose,ꢀ1/8"ꢀfromꢀcaseꢀforꢀ5ꢀseconds  
Thermal Characteristics  
TJ,ꢀTSTG  
TL  
ꢁ55ꢀtoꢀ150  
300  
°C  
°C  
Parameter  
Symbol  
RθJA  
AOT12N60FD  
AOTF12N60FD  
Units  
MaximumꢀJunctionꢁtoꢁAmbientꢀA,D  
65  
65  
°C/W  
MaximumꢀCaseꢁtoꢁsinkꢀA  
RθCS  
0.5  
ꢁꢁ  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁCase  
RθJC  
0.45  
2.5  
*ꢀDrainꢀcurrentꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperature.  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀRev3:Marꢀ2011ꢀ  
www.aosmd.com  
Pageꢀ1ꢀofꢀ6ꢀꢀꢀꢀꢀꢀꢀ  

与AOT12N60FD相关器件

型号 品牌 获取价格 描述 数据表
AOT12N60FDL AOS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AOT12N60L AOS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AOT12N65 FREESCALE

获取价格

650V, 12A N-Channel MOSFET
AOT12N65 AOS

获取价格

650V, 12A N-Channel MOSFET
AOT13N50 AOS

获取价格

500V, 13A N-Channel MOSFET
AOT13N50 FREESCALE

获取价格

500V, 13A N-Channel MOSFET
AOT1404L AOS

获取价格

40V N-Channel Rugged Planar MOSFET
AOT1404L FREESCALE

获取价格

40V N-Channel Rugged Planar MOSFET
AOT14N50 AOS

获取价格

500V, 14A N-Channel MOSFET
AOT14N50FD AOS

获取价格

500V, 14A N-Channel MOSFET