Datasheet > AOT12N40L

AOT12N40L

更新时间： 2024-01-08 03:04:33

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	352K
描述
Transistor

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技术参数
数据手册

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AOT12N40L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AOT12N40L 数据手册

AOT12N40

400V,11A N-Channel MOSFET

General Description

Product Summary

V_DS

500V@150℃

11A

The AOT12N40 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this part can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

<0.59Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT12N40L

Top View

TO-220

AOT12N40

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

400

Gate-Source Voltage

V_GS

±30

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

3.5

Avalanche Current ^C

I_AR

Repetitive avalanche energy ^C

E_AR

E_AS

dv/dt

184

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

368

V/ns

W/ ^oC

184

P_D

Power Dissipation ^B

Derate above 25^oC

1.5

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,D

Maximum Case-to-sink ^A

R_θCS

0.5

Maximum Junction-to-Case

R_θJC

0.56

0.68

Rev0: Sep 2012

www.aosmd.com

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