Datasheet > AON7296

AON7296

更新时间： 2024-09-16 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	268K
描述
100V N-Channel MOSFET

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AON7296 数据手册

AON7296

100V N-Channel MOSFET

General Description

Product Summary

V_DS

100V

The AON7296 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an

extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

12.5A

< 66mΩ

< 90mΩ

100% UIS Tested

100% R_gTested

DFN 3x3 EP

Top View

Bottom View

Top View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

12.5

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

0.8

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

20.8

8.3

P_D

T_A=25°C

3.1

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

Rev 0: Sep. 2012

www.aosmd.com

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