Datasheet > AON6934

AON6934

更新时间： 2024-11-18 19:48:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
10页	523K
描述
Transistor

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AON6934 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Base Number Matches：	1

AON6934 数据手册

AON6934

30V Dual Asymmetric N-Channel AlphaMOS

General Description

Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5V_GS

V_DS

30V

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

I_D(at V_GS=10V)

28A

36A

R_DS(ON)(at V_GS=10V)

<5.2mΩ

<9.5mΩ

<2.8mΩ

<4.4mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

Application

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

DFN5X6

Top View

Bottom View

PIN1

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max Q1

Max Q2

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

112

144

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche Energy L=0.05mH ^C

I_DSM

I_AS

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

3.6

2.3

4.3

2.7

P_DSM

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Symbol

Typ Q1 Typ Q2 Max Q1 Max Q2

Units

°C/W

≤ 10s

R_θJA

Steady-State

R_θJC

3.3

3.8

Rev 1 : April 2012

www.aosmd.com

Page 1 of 10

12 3 4 5 6 7...10

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