Datasheet > AON6918

AON6918

更新时间： 2024-11-18 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
10页	400K
描述
25V Dual Asymmetric N-Channel MOSFET

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AON6918

25V Dual Asymmetric N-Channel MOSFET

General Description

Product Summary

The AON6918 is designed to provide a high efficiency

synchronous buck power stage with optimal layout and

board space utilization. It includes two specialized

MOSFETs in a dual Power DFN5x6A package. The Q1

"High Side" MOSFET is designed to minimize switching

losses. The Q2 "Low Side" MOSFET is designed for low

V_DS

25V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

60A

85A

<5.2mΩ

<7.8mΩ

<1.8mΩ

<2.7mΩ

_DS(ON)to reduce conduction losses. The AON6918 is well

suited for use in compact DC/DC converter applications.

100% UIS Tested

100% Rg Tested

DFN5X6A

Top View

Bottom View

PIN1

(S1/D2)

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max Q1

Max Q2

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

Continuous Drain

Current^G

V_GS

I_D

I_DM

I_DSM

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

200

490

26.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

I_AS, I_AR

Avalanche Energy L=0.1mH ^C

E_AS, E_AR

304

104

41.5

2.2

1.4

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

12.5

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ Q1 Typ Q2 Max Q1 Max Q2

Units

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

°C/W

R_θJA

Steady-State

R_θJC

3.1

0.9

1.2

Rev0 : Aug 2011

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