Datasheet > AON6912A

AON6912A

更新时间： 2024-11-18 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
10页	551K
描述
30V Dual Asymmetric N-Channel MOSFET

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AON6912A

30V Dual Asymmetric N-Channel MOSFET

General Description

Product Summary

The AON6912A is designed to provide a high efficiency

synchronous buck power stage with optimal layout and

board space utilization. It includes two specialized

MOSFETs in a dual Power DFN5x6 package. The Q1

"High Side" MOSFET is designed to minimize switching

losses. The Q2 "Low Side" MOSFET is designed for low

R_DS(ON)to reduce conduction losses. The AON6912A is

well suited for use in compact DC/DC converter

applications.

V_DS

30V

34A

30V

52A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

<13.7mΩ <7.3mΩ

<19.3mΩ <10.4mΩ

100% UIS Tested

100% Rg Tested

DFN5X6

Top View

Bottom View

PIN1

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max Q1

Max Q2

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

I_D

I_DM

I_DSM

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

130

13.8

10.8

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche Energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

1.9

1.2

2.1

1.3

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ Q1 Typ Q2 Max Q1 Max Q2

Units

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

°C/W

R_θJA

Steady-State

R_θJC

4.5

3.5

5.5

4.2

Rev1: Mar. 2011

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