AON6910A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
Q2
The AON6910A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and board
space utilization.It includes two specialized MOSFETs in a dual
Power DFN5x6B package. The Q1 "High Side" MOSFET is
desgined to minimze switching losses. The Q2 "Low Side"
MOSFET is desgined for low RDS(ON) to reduce conduction
losses.Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.In addition,switching behavior
is well controlled with a "Schottky style" soft recovery body
diode.
Q1
VDS
30V
30V
80A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
37A
<14mΩ
<4.1mΩ
<5.0mΩ
<20mΩ
100% UIS Tested
100% Rg Tested
DFN5X6B
Top View
Bottom View
PIN1
Bottom View
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Units
VDS
Drain-Source Voltage
30
V
V
VGS
ID
IDM
IDSM
±12
80
52
190
16
13
35
61
52
20
2
Gate-Source Voltage
±20
37
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
TC=100°C
23
A
85
TA=25°C
TA=70°C
9.1
7.2
21
Continuous Drain
Current
Avalanche Current C
Avalanche Energy L=0.1mH C
A
IAS, IAR
A
EAS, EAR
22
mJ
TC=25°C
31
PD
W
Power Dissipation B
TC=100°C
12.5
1.9
1.2
TA=25°C
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ Q1 Typ Q2 Max Q1 Max Q2
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
°C/W
°C/W
°C/W
t ≤ 10s
29
56
27
51
2
35
67
4
32
61
RθJA
Steady-State
Steady-State
RθJC
3.3
2.4
Rev 0: Jan 2011
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