Datasheet > AON6906A

AON6906A

更新时间： 2024-11-18 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
10页	376K
描述
30V Dual Asymmetric N-Channel MOSFET

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AON6906A

30V Dual Asymmetric N-Channel MOSFET

General Description

Product Summary

The AON6906A is designed to provide a high efficiency

synchronous buck power stage with optimal layout and board

space utilization.It includes two specialized MOSFETs in a dual

Power DFN5x6A package. The Q1 "High Side" MOSFET is

desgined to minimze switching losses. The Q2 "Low Side"

MOSFET is desgined for low R_DS(ON)to reduce conduction

losses.Power losses are minimized due to an extremely low

combination of R_DS(ON)and Crss.In addition,switching behavior

is well controlled with a "Schottky style" soft recovery body

diode.

V_DS

30V

37A

30V

48A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

<14.4mΩ <11.7mΩ

<21.3mΩ <17.5mΩ

100% UIS Tested

100% Rg Tested

DFN5X6

Top View

Bottom View

PIN1

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max Q1

Max Q2

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

±20

T_C=25°C

100

8.1

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

T_A=25°C

T_A=70°C

9.1

7.2

Continuous Drain

Current

Avalanche Current ^C

Avalanche Energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

12.5

1.9

1.2

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ Q1 Typ Q2 Max Q1 Max Q2

Units

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

3.3

2.3

2.8

Rev 0. Oct 2010

www.aosmd.com

Page 1 of 10

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