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AON6884 PDF预览

AON6884

更新时间: 2024-11-09 12:51:39
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 250K
描述
40V Dual N-Channel MOSFET

AON6884 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:1.94
Is Samacsys:NBase Number Matches:1

AON6884 数据手册

 浏览型号AON6884的Datasheet PDF文件第2页浏览型号AON6884的Datasheet PDF文件第3页浏览型号AON6884的Datasheet PDF文件第4页浏览型号AON6884的Datasheet PDF文件第5页浏览型号AON6884的Datasheet PDF文件第6页 
AON6884  
40V Dual N-Channel MOSFET  
General Description  
Product Summary  
VDS  
40V  
The AON6884 uses advanced trench technology to  
provide excellent RDS(ON) with low gate charge. This is an  
all purpose device that is suitable for use in a wide range  
of power conversion applications.  
ID (at VGS=10V)  
34A  
R
DS(ON) (at VGS=10V)  
< 11.3m  
< 13.8mΩ  
RDS(ON) (at VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
D1  
D2  
Top View  
1
2
3
4
8
S1  
D1  
7
D1  
G1  
S2  
6
D2  
5
G2  
D2  
G1  
G2  
S1  
S2  
DFN5X6 EP2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
40  
±20  
34  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
21  
A
Pulsed Drain Current C  
IDM  
120  
TA=25°C  
TA=70°C  
9
Continuous Drain  
Current  
IDSM  
A
7
Avalanche Current C  
IAS, IAR  
35  
A
Avalanche energy L=0.1mH C  
EAS, EAR  
61  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
21  
PD  
W
8
TA=25°C  
1.6  
1
PDSM  
W
°C  
Power Dissipation A  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
35  
65  
5
Max  
45  
80  
6
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
RθJC  
Rev 1: November 2010  
www.aosmd.com  
Page 1 of 6  

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