AON6884

更新时间： 2024-11-18 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	250K
描述
40V Dual N-Channel MOSFET

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技术参数
数据手册

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AON6884 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.94
Is Samacsys：	N	Base Number Matches：	1

AON6884 数据手册

AON6884

40V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

40V

The AON6884 uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge. This is an

all purpose device that is suitable for use in a wide range

of power conversion applications.

I_D(at V_GS=10V)

34A

_DS(ON)(at V_GS=10V)

< 11.3mΩ

< 13.8mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

Top View

DFN5X6 EP2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

120

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

1.6

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

Rev 1: November 2010

www.aosmd.com

Page 1 of 6

12 3 4 5 6

中文翻译

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