Datasheet > AON6850

AON6850

更新时间： 2024-11-09 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	267K
描述
100V Dual N-Channel MOSFET

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AON6850 数据手册

AON6850

100V Dual N-Channel MOSFET

SDMOS^TM

General Description

Product Summary

The AON6850 is fabricated with SDMOS^TMtrench

technology that combines excellent R_DS(ON)with low gate

charge and low Qrr.The result is outstanding efficiency

with controlled switching behavior. This universal

technology is well suited for PWM, load switching and

general purpose applications.

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

28A

< 35mΩ

< 42mΩ

100% UIS Tested

100% R_gTested

Top View

DFN5X6 EP2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

±25

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

1.7

P_DSM

Power Dissipation ^A

T_A=70°C

1.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.8

2.2

Rev 0: Feb 2010

www.aosmd.com

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