Datasheet > AON6816

AON6816

更新时间： 2024-11-18 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	287K
描述
30V Dual N-Channel AlphaMOS

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AON6816 数据手册

AON6816

30V Dual N-Channel AlphaMOS

General Description

Product Summary

V_DS

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5V_GS

• Low Gate Charge

• ESD protection

• RoHS and Halogen-Free Compliant

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

16A

< 6.1mΩ

< 9.5mΩ

Typical ESD protection

HBM Class 2

Application

• DC/DC Converters

100% UIS Tested

100% R_gTested

Top View

DFN5X6 EP2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS

Avalanche energy L=0.05mH ^C

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

2.8

P_DSM

°C

1.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

Rev0: Mar 2012

www.aosmd.com

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