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AON4701 PDF预览

AON4701

更新时间: 2024-10-14 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
5页 175K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AON4701 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.82峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AON4701 数据手册

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AON4701  
P-Channel Enhancement Mode Field Effect Transistor  
with Schottky Diode  
General Description  
Features  
VDS (V) = -20V  
ID = -3.4A (VGS = -4.5V)  
The AON4701 uses advanced trench technology to  
provide excellent R DS(ON) and low gate charge. A  
Schottky diode is provided to facilitate the implementation  
of a bidirectional blocking switch, or for DC-DC  
conversion applications. Standard Product AON4701 is  
Pb-free (meets ROHS & Sony 259 specifications).  
AON4701L is a Green Product ordering option. AON4701  
and AON4701L are electrically identical.  
RDS(ON) < 90mΩ (VGS = -4.5V)  
RDS(ON) < 120mΩ (VGS = -2.5V)  
RDS(ON) < 160mΩ (VGS = -1.8V)  
SCHOTTKY  
VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A  
D
K
1
2
3
4
8
7
6
5
A
A
S
G
K
K
D
D
G
S
A
DFN3X2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
MOSFET  
-20  
Schottky  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±8  
TA=25°C  
TA=70°C  
-3.4  
ID  
Continuous Drain Current A  
Pulsed Drain Current B  
-2.7  
A
IDM  
-15  
VKA  
Schottky reverse voltage  
20  
1.9  
1.2  
V
A
TA=25°C  
TA=70°C  
IF  
IFM  
Continuous Forward Current A  
Pulsed Forward Current B  
7
TA=25°C  
TA=70°C  
1.7  
1.1  
0.96  
0.62  
PD  
W
Power Dissipation  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
°C  
Parameter: Thermal Characteristics MOSFET  
Symbol  
Typ  
49  
Max  
75  
Units  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
81  
37  
100  
45  
Steady-State  
°C/W  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
Thermal Characteristics Schottky  
Maximum Junction-to-Ambient A  
60  
89  
40  
75  
130  
50  
t 10s  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
°C/W  

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