Datasheet > AON4605

AON4605

更新时间： 2024-10-14 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
9页	424K
描述
30V Complementary MOSFET

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技术参数
数据手册

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AON4605 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.57	最大漏极电流 (Abs) (ID)：	4.3 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	1.9 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

AON4605 数据手册

AON4605

30V Complementary MOSFET

General Description

Product Summary

The AON4605 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

N-Channel

P-Channel

V_DS= 30V

-30V

I_D= 4.3A (V_GS=10V)

R_DS(ON)

-3.4A (V_GS=-10V)

R_DS(ON)

< 50mꢀ (V_GS=10V)

< 70mꢀ (V_GS=4.5V)

< 110mꢀ (VGS=-10V)

< 180mꢀ (VGS=-4.5V)

DFN 3x2A

Top View

Bottom View

Top View

Pin 1

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max n-channel

Max p-channel

Units

Drain-Source Voltage

Gate-Source Voltage

±20

4.3

3.4

-30

±20

-3.4

-2.7

-13

1.9

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

I_DM

P_D

T_A=25°C

T_A=70°C

1.9

1.2

°C

Power Dissipation ^B

1.2

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

51.5

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

100

R_θJL

Rev 2: Feb. 2011

www.aosmd.com

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