Datasheet > AON4603

AON4603

更新时间： 2024-10-14 03:18:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	151K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AON4603 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AON4603 数据手册

AON4603

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AON4603 uses advanced trench technology to

provide excellent R _DS(ON)and low gate charge. The

complementary MOSFETs form a high-speed power

inverter, suitable for a multitude of applications.

Standard Product AON4603 is Pb-free (meets ROHS

& Sony 259 specifications). AON4603L is a Green

Product ordering option. AON4603 and AON4603L are

electrically identical.

n-channel

p-channel

V_DS(V) = 30V

I_D= 4A

-30V

-3.6A

(V_GS= ±10V)

_DS(ON)< 75mΩ < 100mΩ (V_GS= ±10V)

_DS(ON)< 115mΩ < 180mΩ (V_GS= ±4.5V)

DFN2X3

Absolute Maximum Ratings T_A=25°C unless otherwise noted

p-channel

n-channel

Parameter

Symbol

Max n-channel Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

±20

-30

±20

V_GS

T_A=25°C

T_A=70°C

-3.6

I_D

3.2

-2.9

Pulsed Drain Current ^B

I_DM

-12

T_A=25°C

T_A=70°C

1.9

2.1

P_D

Power Dissipation

1.2

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics: n-channel

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

102

125

°C/W

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Thermal Characteristics: p-channel

Parameter

R_θJL

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

R_θJA

Steady-State

110

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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