Datasheet > AON4421

AON4421

更新时间： 2024-10-14 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	271K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AON4421 数据手册

AON4421

P-Channel Enhancement Mode

Field Effect Transistor

General Description

Product Summary

-30V

V_DS

The AON4421 uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge. This

device is suitable for use as a load switch.

-8A

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

< 26mΩ

< 34mΩ

ESD Protected

-RoHS Compliant

-Halogen Free

DFN 3x2

Top View

Bottom View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

V_GS

Gate-Source Voltage

±20

T_A=25°C

T_A=70°C

Pulsed Drain Current ^C

-8

-6

Continuous Drain

Current

I_D

I_DM

-60

T_A=25°C

T_A=70°C

2.5

P_D

Power Dissipation ^B

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 0: February 2009

www.aosmd.com

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