Datasheet > AON4407L

AON4407L

更新时间： 2024-10-14 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	161K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AON4407L 数据手册

AON4407L

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AON4407L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 1.8V. This device is suitable

for use as a load switch.

V_DS(V) = -12V

I_D= -9 A

(V_GS= -4.5V)

_DS(ON)< 20mΩ (V_GS= -4.5V)

_DS(ON)< 25mΩ (V_GS= -2.5V)

_DS(ON)< 31mΩ (V_GS= -1.8V)

-RoHS Compliant

-Halogen Free

ESD Protected!

DFN 3x2

Top View

Bottom View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

-12

V_GS

Gate-Source Voltage

±8

-9

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

-7

I_DM

-60

T_A=25°C

T_A=70°C

2.5

Power Dissipation ^B

P_D

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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