AON3812

更新时间： 2024-10-14 03:18:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	119K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AON3812 数据手册

AON3812

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AON3812 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 2.5V while retaining a 12V

V_GS(MAX)rating. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load

switch, facilitated by its common-drain configuration.

Standard Product AON3812 is Pb-free (meets ROHS &

Sony 259 specifications).

V_DS(V) = 30V

I_D= 6A (V_GS= 10V)

R_DS(ON)< 27mΩ (V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 4.5V)

R_DS(ON)< 40mΩ (V_GS= 2.5V)

DFN 3x3

Top View

Bottom View

1.6KΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

±12

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

T_A=25°C ^F

T_A=70°C

I_D

5.3

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

2.2

P_D

Power Dissipation ^A

1.4

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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