Datasheet > AON2800

AON2800

更新时间： 2024-10-30 12:24:55

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	268K
描述
20V Dual N-Channel MOSFET

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AON2800 数据手册

AON2800

20V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AON2800 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=4.5V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

4.5A

< 47mΩ

< 65mΩ

ESD Protected

DFN 2x2 Package

S1 G1

Pin 1

Bottom

Pin 1

Top

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±8

4.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

3.8

I_DM

P_D

T_A=25°C

T_A=70°C

1.5

°C

Power Dissipation ^B

0.95

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^B

≤ 10s

Steady-State

≤ 10s

Steady-State

R_θJA

120

175

155

235

R_θJA

Rev 1: August 2011

www.aosmd.com

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