Datasheet > AON2701L

AON2701L

更新时间： 2024-10-30 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
6页	207K
描述
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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中文翻译

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AON2701L 数据手册

AON2701

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

Features

TheꢀAON2701/Lꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto

provideꢀexcellentꢀR_DS(ON)ꢀandꢀlowꢀgateꢀcharge.ꢀA

Schottkyꢀdiodeꢀisꢀprovidedꢀtoꢀfacilitateꢀthe

implementationꢀofꢀaꢀbidirectionalꢀblockingꢀswitch,ꢀor

forꢀDCꢁDCꢀconversionꢀapplications.

AON2701ꢀandꢀAON2701Lꢀareꢀelectricallyꢀidentical.

ꢁRoHSꢀCompliant

ꢁHalogenꢀFree*

V_DSꢀ(V)ꢀ=ꢀꢁ20V

I_Dꢀ=ꢀꢁ3Aꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(V_GSꢀ=ꢀꢁ4.5V)

_DS(ON)ꢀ<ꢀ120mΩ ꢀ(V_GSꢀ=ꢀꢁ4.5V)

R_DS(ON)ꢀ<ꢀ160mΩꢀꢀ(V_GSꢀ=ꢀꢁ2.5V)

R_DS(ON)ꢀ<ꢀ200mΩ ꢀ(V_GSꢀ=ꢀꢁ1.8V)

SCHOTTKY

V_KAꢀ(V)ꢀ=ꢀ20V,ꢀI_Fꢀ=ꢀ2A,ꢀV_F<0.45V@1A

DFN 2x2 Package

Top

Bottom

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

MOSFET

ꢁ20

Schottky

Units

V_DS

DrainꢁSourceꢀVoltage

GateꢁSourceꢀVoltage

V_GS

±8

T_A=25°C

T_A=70°C

ꢁ3

I_D

ContinuousꢀDrainꢀCurrent^Aꢀ

ꢁ2.3

I_DM

PulsedꢀDrainꢀCurrentꢀ

ꢁ15

V_KA

Schottkyꢀreverseꢀvoltage

2.5

1.5

T_A=25°C

T_A=70°C

I_F

I_FM

ContinuousꢀForwardꢀCurrent^Aꢀ

PulsedꢀForwardꢀCurrentꢀ

T_A=25°C

T_A=70°C

1.5

0.95

1.45

0.92

P_D

PowerꢀDissipation

T_J,ꢀT_STG

JunctionꢀandꢀStorageꢀTemperatureꢀRange

ꢁ55ꢀtoꢀ150

°C

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

MaximumꢀJunctionꢁtoꢁAmbient^Aꢀ

tꢀ≤ꢀ10s

R_θJA

°C/W

MaximumꢀJunctionꢁtoꢁAmbient^Aꢀ

SteadyꢁState

Thermal Characteristics Schottky

MaximumꢀJunctionꢁtoꢁAmbient^Aꢀ

tꢀ≤ꢀ10s

R_θJA

°C/W

MaximumꢀJunctionꢁtoꢁAmbient^Aꢀ

SteadyꢁState

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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