Datasheet > AON2408

AON2408

更新时间： 2024-10-30 12:50:51

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	241K
描述
20V N-Channel MOSFET

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AON2408 数据手册

AON2408

20V N-Channel MOSFET

General Description

Product Summary

V_DS

The AON2408 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

20V

I_D(at V_GS=4.5V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

< 14.5mΩ

< 19mΩ

DFN 2x2B

Top View

Bottom View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_A=25°C

Continuous Drain

Current ^G

I_D

T_A=100°C

Pulsed Drain Current ^C

I_DM

P_D

2.8

T_A=25°C

T_A=70°C

°C

Power Dissipation ^A

1.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

≤ 10s

R_θJA

Steady-State

Rev 0 : Dec 2011

www.aosmd.com

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