AON2407
30V P-Channel MOSFET
General Description
technology with a low resistance package to provide
The AON2407 combines advanced trench MOSFET
extremely low RDS(ON)
. This device is ideal for load switch and battery protection applications.
Features
VDS
-30V
ID (at VGS=-10V)
-6.3A
RDS(ON) (at VGS =-10V)
< 37.5mΩ
< 46mΩ
< 70mΩ
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
-6.3
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-5
Pulsed Drain Current C
IDM
PD
-34
TA=25°C
TA=70°C
2.8
W
°C
Power Dissipation A
1.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
37
Max
45
Units
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t
≤ 10s
RθJA
Steady-State
66
80
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