Datasheet > AON2400

AON2400

更新时间： 2024-02-17 22:28:56

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	295K
描述
8V N-Channel MOSFET

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AON2400 数据手册

AON2400

8V N-Channel MOSFET

General Description

technology with a low resistance package to provide

The AON2400 combines advanced trench MOSFET

extremely low R_DS(ON)

. This device is ideal for load switch

and battery protection applications.

Features

V_DS

I_D(at V_GS=4.5V)

R_DS(ON)(at V_GS= 2.5V)

R_DS(ON)(at V_GS= 1.8V)

R_DS(ON)(at V_GS= 1.5V)

< 11mΩ

< 13mΩ

< 16mΩ

< 23mΩ

R_DS(ON)(at V_GS= 1.2V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

_DS

Gate-Source Voltage

V_GS

±5

T_A=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_A=100°C

I_DM

P_D

T_A=25°C

T_A=70°C

2.8

°C

Power Dissipation ^A

1.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

≤ 10s

R_θJA

Steady-State

1 / 5

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