Datasheet > AON2260

AON2260

更新时间： 2024-09-13 12:51:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	270K
描述
60V N-Channel MOSFET

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AON2260 数据手册

AON2260

60V N-Channel MOSFET

General Description

technology with a low resistance package to provide

The AON2260 combines advanced trench MOSFET

extremely low R_DS(ON)

.This device is ideal for boost

converters and synchronous rectifiers for consumer,

ting.

telecom, industrial power supplies and LED backligh

Features

V_DS

60V

I_D(at V_GS=10V)

_DS(ON)(at V_GS= 10V)

< 44mΩ

< 53mΩ

R_DS(ON)(at V_GS= 4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

4.7

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

2.8

°C

Power Dissipation ^A

1.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

≤ 10s

R_θJA

Steady-State

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