Datasheet > AON1611

AON1611

更新时间： 2024-09-15 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	226K
描述
20V P-Channel MOSFET

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AON1611 数据手册

AON1611

20V P-Channel MOSFET

General Description

Product Summary

V_DS

The AON1611 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

-20V

I_D(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-1.8V)

R_DS(ON)(at V_GS=-1.5V)

-4A

< 58mΩ

< 76mΩ

< 98mΩ

< 120mΩ

Typical ESD protection

HBM Class 2

DFN 1.6x1.6A

Top View

Bottom View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-20

±8

-4

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current ^G

I_D

-3

Pulsed Drain Current ^C

I_DM

P_D

-16

1.8

T_A=25°C

T_A=70°C

°C

Power Dissipation ^A

1.15

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

≤ 10s

R_θJA

Steady-State

110

Rev 0 : June 2012

www.aosmd.com

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