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AON1611 PDF预览

AON1611

更新时间: 2022-05-17 23:07:46
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
5页 260K
描述
20V P-Channel MOSFET

AON1611 数据手册

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AON1611  
20V P-Channel MOSFET  
General Description  
technology with a low resistance package to provide  
The AON1611 combines advanced trench MOSFET  
extremely low RDS(ON)  
and battery protection applications.  
. This device is ideal for load switch  
Features  
VDS  
-20V  
ID (at VGS=-4.5V)  
RDS(ON) (at VGS =-4.5V)  
RDS(ON) (at VGS =-2.5V)  
RDS(ON) (at VGS =-1.8V)  
-4A  
< 58m  
< 76mΩ  
< 98mΩ  
< 120mΩ  
RDS(ON) (at VGS =-1.5V)  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
±8  
-4  
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current G  
ID  
-3  
A
Pulsed Drain Current C  
IDM  
PD  
-16  
1.8  
TA=25°C  
TA=70°C  
W
°C  
Power Dissipation A  
1.15  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
56  
Max  
70  
Units  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
t
10s  
RθJA  
Steady-State  
88  
110  
1 / 5  
www.freescale.net.cn  

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