AON1611
20V P-Channel MOSFET
General Description
technology with a low resistance package to provide
The AON1611 combines advanced trench MOSFET
extremely low RDS(ON)
and battery protection applications.
. This device is ideal for load switch
Features
VDS
-20V
ID (at VGS=-4.5V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS =-2.5V)
RDS(ON) (at VGS =-1.8V)
-4A
< 58mΩ
< 76mΩ
< 98mΩ
< 120mΩ
RDS(ON) (at VGS =-1.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-20
±8
-4
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current G
ID
-3
A
Pulsed Drain Current C
IDM
PD
-16
1.8
TA=25°C
TA=70°C
W
°C
Power Dissipation A
1.15
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
56
Max
70
Units
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t
≤ 10s
RθJA
Steady-State
88
110
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