Datasheet > AON1605

AON1605

更新时间： 2024-09-15 12:24:55

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	270K
描述
20V P-Channel MOSFET

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AON1605 数据手册

AON1605

20V P-Channel MOSFET

General Description

Product Summary

V_DS

-20V

The AON1605 utilize advanced trench MOSFET

technology in small DFN 1.0 x 0.6 package. This device is

ideal for load switch applications.

I_D(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-1.8V)

-0.7A

< 710mΩ

< 930mΩ

< 1250mΩ

Typical ESD protection

HBM Class 1C

DFN 1.0x0.6

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-20

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25°C

T_A=70°C

-0.7

Continuous Drain

Current ^E

I_D

-0.55

-2

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

0.9

°C

Power Dissipation ^A

0.55

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^B

≤ 10s

Steady-State

≤ 10s

Steady-State

100

140

245

340

R_θJA

110

200

280

R_θJA

Rev 0 : Oct. 2012

www.aosmd.com

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