Datasheet > AOL1454

AOL1454

更新时间： 2024-09-14 03:18:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	130K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1454 数据手册

AOL1454

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1454 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge. It is ESD

protected. This device is suitable for use as a low side

switch in SMPS and general purpose applications.

Standard Product AOL1454 is Pb-free (meets ROHS

& Sony 259 specifications).

V_DS(V) = 40V

I_D= 50A (V_GS= 10V)

_DS(ON)< 9mΩ (V_GS= 10V)

_DS(ON)< 13mΩ (V_GS= 4.5V)

ESD Protected

UIS Tested

Rg,Ciss,Coss,Crss Tested

Ultra SO-8^TMTop View

Fits SOIC8

footprint !

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Continuous Drain

Current ^A

I_DM

100

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

5.0

P_DSM

Power Dissipation ^A

T_A=70°C

3.2

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

1.8

2.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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