AOL1444L

更新时间： 2024-09-10 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	151K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOL1444L 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AOL1444L 数据手册

AOL1444

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1444 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity

and body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core

power conversion.Standard Product AOL1444 is

Pb-free (meets ROHS & Sony 259 specifications).

AOL1444L is a Green Product ordering option.

AOL1444 and AOL1444L are electrically identical.

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

R_DS(ON)< 4.3mΩ (V_GS= 10V)

_DS(ON)< 6.3mΩ (V_GS= 4.5V)

UltraSO-8^TMTop View

Fits SOIC8

footprint !

Bottom tab

connected to

drain

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Maximum

Units

V_GS

±20

T_C=25°C ^G

T_C=100°C ^B

Continuous Drain

Current ^B,G

I_D

Pulsed Drain Current

Continuous Drain

Current ^G

Avalanche Current^C

I_DM

200

T_A=25°C

T_A=70°C

I_DSM

I_AR

Repetitive avalanche energy L=0.1mH^C

E_AR

T_C=25°C

Power Dissipation^B

T_C=100°C

100

P_D

T_A=25°C

2.1

P_DSM

Power Dissipation^A

T_A=70°C

1.3

Junction and Storage Temperature Range T_J, T_STG

Thermal Characteristics

-55 to 175

°C

Parameter

Symbol

Typ

19.6

Max

Units

°C/W

Maximum Junction-to-Ambient^A

1.5

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient^A

Maximum Junction-to-Case^C

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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