Datasheet > AOL1444_08

AOL1444_08

更新时间： 2024-09-10 12:24:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	214K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1444_08 数据手册

AOL1444

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1444 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity and

body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core power

conversion.

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

R_DS(ON)< 4.3mΩ (V_GS= 10V)

R_DS(ON)< 6.3mΩ (V_GS= 4.5V)

UIS Tested

Rg,Ciss,Coss,Crss Tested

-RoHS Compliant

-Halogen and Antimony Free Green Device*

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

Pulsed Drain Current

Continuous Drain

Current ^G

200

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current

Repetitive avalanche energy L=0.1mH

E_AR

T_C=25°C

100

P_D

Power Dissipation

T_C=100°C

T_A=25°C

T_A=70°C

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Symbol

Typ

19.6

Max

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

Maximum Junction-to-Ambient

R_θJC

1.5

Maximum Junction-to-Case

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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