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AOL1442 PDF预览

AOL1442

更新时间: 2024-09-10 03:18:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 160K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOL1442 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

AOL1442 数据手册

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AOL1442  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOL1442 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load  
switching and general purpose applications. Standard  
Product AOL1442 is Pb-free (meets ROHS & Sony  
259 specifications). AOL1442L is a Green Product  
ordering option. AOL1442 and AOL1442L are  
electrically identical.  
VDS (V) = 30V  
ID = 75A  
(VGS = 10V)  
RDS(ON) < 5m(VGS = 10V)  
RDS(ON) < 9m(VGS = 4.5V)  
UIS Tested  
Rg,Ciss,Coss,Crss Tested  
Ultra SO-8TM Top View  
D
S
Fits SOIC8  
footprint !  
D
Bottom tab  
connected to  
G
drain  
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
CurrentG  
30  
V
V
VGS  
±20  
TC=25°C  
75  
TC=100°C  
ID  
56  
A
Pulsed Drain Current C  
IDM  
200  
Continuous Drain  
Current H  
TA=25°C  
TA=70°C  
25  
A
IDSM  
IAR  
20  
Avalanche Current C  
30  
A
C
Repetitive avalanche energy L=0.3mH  
EAR  
135  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
50  
PD  
W
25  
TA=25°C  
5
3
PDSM  
W
Power Dissipation A  
TA=70°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16.2  
44  
Max  
Units  
°C/W  
°C/W  
°C/W  
A
t 10s  
Steady-State  
Steady-State  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Maximum Junction-to-Case B  
25  
60  
3
RθJA  
A
RθJC  
2
Alpha & Omega Semiconductor, Ltd.  

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