Datasheet > AOL1436_08

AOL1436_08

更新时间： 2024-09-10 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	142K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1436_08 数据手册

AOL1436

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1436 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity and

body diode characteristics. This device is ideally suite

for use as a High side switch in CPU core power

conversion.

V_DS(V) = 25V

I_D= 50A (V_GS= 10V)

R_DS(ON)< 6mΩ (V_GS= 20V)

_DS(ON)< 8.2mΩ (V_GS= 12V)

R_DS(ON)< 11.5mΩ (V_GS= 10V)

-RoHS Compliant

-Halogen and Antimony Free Green Device*

UIS Tested

Rg,Ciss,Coss,Crss Tested

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B

±30

T_C=25°C ^G

T_C=100°C

I_D

Pulsed Drain Current^C

Continuous Drain

Current ^A

I_DM

120

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current^C

Repetitive avalanche energy L=0.3mH^C

E_AR

118

T_C=25°C

P_D

Power Dissipation^B

T_C=100°C

T_A=25°C

2.3

P_DSM

Power Dissipation^A

T_A=70°C

1.4

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient^A

Maximum Junction-to-Case^D

t ≤ 10s

Steady-State

R_θJA

R_θJC

2.5

3.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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