Datasheet > AOL1436

AOL1436

更新时间： 2024-09-10 03:18:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	120K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOL1436 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82
Base Number Matches：	1

AOL1436 数据手册

AOL1436

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1436 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity and

body diode characteristics. This device is ideally suite

for use as a High side switch in CPU core power

conversion.Standard Product AOL1436 is Pb-free

(meets ROHS & Sony 259 specifications).

V_DS(V) = 25V

I_D= 50A (V_GS= 10V)

R_DS(ON)< 6mΩ (V_GS= 20V)

_DS(ON)< 8.2mΩ (V_GS= 12V)

R_DS(ON)< 11.5mΩ (V_GS= 10V)

UIS Tested!

Rg,Ciss,Coss,Crss Tested!

UltraSO-8^TMTop View

Fits SOIC8

footprint !

Bottom tab

connected to

drain

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B

±30

T_C=25°C ^G

T_C=100°C

I_D

Pulsed Drain Current^C

Continuous Drain

Current ^A

I_DM

120

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current^C

Repetitive avalanche energy L=0.3mH^C

E_AR

118

T_C=25°C

Power Dissipation^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient^A

Maximum Junction-to-Case^D

t ≤ 10s

Steady-State

R_θJA

R_θJC

2.5

3.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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