Datasheet > AOL1432_08

AOL1432_08

更新时间： 2024-09-10 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	145K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1432_08 数据手册

AOL1432

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1432 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

V_DS(V) =25V

I_D= 44 A (VGS = 10V)

_DS(ON)< 8.5 mΩ (V_GS= 10V)

_DS(ON)< 14 mΩ (V_GS= 4.5V)

-RoHS Compliant

-Halogen and Antimony Free Green Device*

UIS Tested

Rg,Ciss,Coss,Crss Tested

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current

T_C=100°C

I_D

Pulsed Drain Current ^C

Continuous Drain

Current ^G

I_DM

100

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

14.2

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

3.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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