Datasheet > AOL1426_08

AOL1426_08

更新时间： 2024-09-10 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	236K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1426_08 数据手册

AOL1426

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1426 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge.This device

is suitable for use as a high side switch in SMPS and

general purpose applications.

V_DS(V) = 30V

I_D= 46A (V_GS= 10V)

R_DS(ON)< 10.5mΩ (V_GS= 10V)

R_DS(ON)< 13.5mΩ (V_GS= 4.5V)

-RoHS Compliant

-Halogen and Antimony Free Green Device*

UIS Tested

Rg,Ciss,Coss,Crss Tested

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

T_C=25°C

Continuous Drain

Current ^B

T_C=100°C

I_D

Pulsed Drain Current

I_DM

120

T_A=25°C

T_A=70°C

Continuous Drain

Current ^H

Avalanche Current ^C

I_DSM

I_AR

Repetitive avalanche energy L=0.3mH ^C

E_AR

135

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation ^A

1.2

T_A=70°C

Junction and Storage Temperature Range T_J, T_STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Case ^C

Steady-State

R_θJC

2.4

3.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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