Datasheet > AOL1422

AOL1422

更新时间： 2024-01-15 06:32:29

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	142K
描述
Transistor

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技术参数
数据手册

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AOL1422 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
Base Number Matches：	1

AOL1422 数据手册

AOL1422

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1422 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is ESD protected and it is

suitable for use in load switching and general

purpose applications.

V_DS(V) = 30V

I_D= 85A

(V_GS= 10V)

R_DS(ON)< 3.7mΩ (V_GS= 10V)

_DS(ON)< 5.4mΩ (V_GS= 4.5V)

Rg,Ciss,Coss,Crss Tested

-RoHS Compliant

-Halogen and Antimony Free Green Device*

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,H

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

I_DM

150

Continuous Drain

Current ^G

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

I_DSM

P_D

100

Power Dissipation ^B

Power Dissipation ^A

2.08

1.3

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

19.6

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Steady-State

R_θJC

0.9

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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