Datasheet > AOL1420

AOL1420

更新时间： 2024-01-29 10:53:25

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	125K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOL1420 数据手册

AOL1420

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOL1420 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. This device is ideally suited for use

as a low side switch in CPU core power conversion.

Standard Product AOL1420 is Pb-free (meets ROHS

& Sony 259 specifications). AOL1420L is a Green

Product ordering option. AOL1420 and AOL1420L

are electrically identical.

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

R_DS(ON)< 3.7mΩ (V_GS= 10V)

R_DS(ON)< 5.5mΩ (V_GS= 4.5V)

Ultra SO-8^TMTop View

Fits SOIC8

footprint !

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

Pulsed Drain Current

Continuous Drain

Current ^G

150

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH

E_AR

112

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

1.3

P_DSM

Power Dissipation ^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

19.6

°C/W

t ≤ 10s

R_θJA

Steady-State

°C/W

R_θJC

0.9

1.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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