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AOL1414L PDF预览

AOL1414L

更新时间: 2024-10-02 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 121K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOL1414L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:NBase Number Matches:1

AOL1414L 数据手册

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AOL1414  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOL1414 uses advanced trench technology to  
provide excellent RDS(ON), low gate chargeand low  
gate resistance. This device is ideally suited for use  
as a high side switch in CPU core power conversion.  
Standard Product AOL1414 is Pb-free (meets ROHS  
& Sony 259 specifications). AOL1414L is a Green  
Product ordering option. AOL1414 and AOL1414L  
are electrically identical.  
VDS (V) = 30V  
ID = 85A (VGS = 10V)  
RDS(ON) < 6.5m(VGS = 10V)  
RDS(ON) < 7.5m(VGS = 4.5V)  
Ultra SO-8TM Top View  
Fits SOIC8  
footprint !  
D
S
D
Bottom tab  
connected to  
drain  
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current B  
VGS  
±12  
85  
TC=25°C  
TC=100°C  
ID  
70  
IDM  
Pulsed Drain Current  
Continuous Drain  
Current G  
200  
15  
A
TA=25°C  
TA=70°C  
IDSM  
IAR  
12  
Avalanche Current C  
30  
A
C
Repetitive avalanche energy L=0.3mH  
EAR  
135  
100  
50  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
TA=25°C  
2.5  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
19.5  
48  
Max  
25  
60  
Units  
°C/W  
°C/W  
°C/W  
A
t 10s  
Steady-State  
Steady-State  
Maximum Junction-to-Ambient  
Maximum Junction-to-Ambient  
Maximum Junction-to-Case C  
RθJA  
A
RθJC  
1
1.5  
Alpha & Omega Semiconductor, Ltd.  

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