Datasheet > AOL1413

AOL1413

更新时间： 2024-10-02 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
6页	465K
描述
P-Channel Enhancement Mode Field

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AOL1413 数据手册

AOL1413

P-Channel Enhancement Mode Field

Effect Transistor

General Description

provide excellent R_DS(ON)and ultra-low low gate charge

The AOL1413 uses advanced trench technology to

with a 25V gate rating. This device is suitable for use

ESD protected.

as a load switch or in PWM applications. The device is

Features

V_DS(V) = -30V

I_D= -38A (V_GS= -10V)

R_DS(ON)< 17mΩ (V_GS= -10V)

R_DS(ON)< 36mΩ (V_GS= -5V)

Ultra SO-8^TMTop View

Bottom tab

connected to

drain

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B

±25

-38

T_C=25°C

T_C=100°C

I_D

-27

Pulsed Drain Current ^C

I_DM

-70

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

-9

I_DSM

P_D

-7

Power Dissipation ^B

Power Dissipation ^A

2.1

P_DSM

1.3

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

2.9

1/6

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